Programmable delay introducing circuit in self-timed memory

ABSTRACT

Delays are introduced in self-timed memories by introducing a capacitance on the path of a signal to be delayed. The capacitances are realized by using idle-lying metal layers in the circuitry. The signal to be delayed is connected to the idle-lying capacitances via programmable switches. The amount of delay introduced depends on the capacitance introduced in the path of signal, which in turn depends on state of the switches. The state of the switches is controlled by delay codes provided externally to the delay introducing circuitry. Since idle-lying metal capacitances are utilized, the circuitry can be implemented using a minimum amount of additional hardware. Also, the delay provided by the circuitry is a function of memory cell SPICE characteristics and core parasitic capacitances.

RELATED APPLICATIONS

This application is a divisional of Ser. No. 11/617,286 filed Dec. 28,2006, the entire disclosure of which is hereby incorporated herein byreference.

FIELD OF THE INVENTION

The present invention relates to the field of self-timed memories, andmore particularly, to a method and circuit for providing delay codes ina self-timed memory.

BACKGROUND OF THE INVENTION

A semiconductor memory is composed of data storage cells arranged inrows and columns. At the time of reading from or writing into a memory,a set of external control signals and clocks are activated. The memorycells from which the data is to be read/written are accessed and thenthe data is read (or written) by the read (or write) circuitry. The readcircuitry performs the reading operation by sensing the voltagedifference developed across the bit lines (or data lines).

To ensure that desired data is read correctly, the read operation at thesense amplifier should be triggered only when sufficient voltagedifferential has been developed across the bit lines. This is done byensuring a time delay between accessing a memory cell and triggering theamplifier. This time delay is also known as the memory cell dischargetime. The circuitry providing this delay is called the self-timingcircuitry. The self-timing circuitry should provide delay, which ensurescorrect reading of the memory cells. This circuitry generates a RESETsignal, which produces the sense amplifier enable signal to enable thesense amplifier to sample the voltage difference across thecorresponding bit lines.

In a self-timed memory array, the timing delay of a RESET signal ismatched to the timing delay of the bit lines of the memory array byderiving the timing of RESET signal from a group of cells calledreference cells. These reference cells have a structure identical tothat of normal memory cells, and as a result, the delay in generation ofthe sense amplifier enable signal matches the timing delay of the bitlines.

Self-timing circuitry has now become an integral part of almost allmemories designed these days. However, in certain situations a needarises for delays in a memory that can be controlled externally. This isachieved by incorporating programmable delay circuitry within a memorydevice. The use of programmable delay circuitry provides flexibility inselecting among multiple delay intervals depending upon circuitoperation conditions or other requirements.

Programmable delay code circuitry is useful during testing of a memoryat speeds different from the normal one. At the time of testing, if adevice fails to perform at high operation speed, it must be tested at aslower operational speed. This is done by delaying the trigger to thesense amplifier using the programmable delay code circuitry.Programmable delay circuitry may also be used during the actualimplementation of a memory device to improve the performance or yield ofthe device.

Different configurations of programmable delay circuitry have been usedin integrated circuits till date. In one of the configurations presentlyused (as disclosed by U.S. Pat. No. 6,034,548 issued to Churcher etal.), the programmable delay circuit includes a signal path, a delaycircuit having a plurality of delay values, a switching circuitconnected to the signal path and the delay circuit for switching aselected delay value into the signal path, and a memory programmableafter fabrication of the integrated circuit for storage of data whichcontrols the switching circuit and hence the delay value switched intothe signal path. The programmable memory in the integrated circuit isprogrammed with a code known as a delay code. This delay code representsthe delay interval to be selected out of different possible delayintervals. Depending upon the delay code, a delay value is switched intothe signal path.

In another configuration (as disclosed by U.S. Pat. No. 6,885,610 B2issued to Takayanagi) a number of delayed versions of a signal aregenerated by a plurality of delay circuits. A programmable multiplexeror selector circuit selects among available delay options. The selectorcircuit is controlled by values stored in a control register, which arein turn controlled by test control signals presented to the programmabledelay circuit. Thus, the delay introduced in a signal can be altered byaltering the test control signals

Although, the above-mentioned techniques provide an efficient means ofprogramming delays in an integrated circuit, however, both these methodsrequire a extra devices in the circuitry. As a result, extra hardware isneeded especially when the delay spectrum required is large.

Moreover, the circuitry used in the prior art provides a delay, which isa function of logic SPICE characteristics only. However, in general, thememory cell SPICE may be different from the SPICE of the periphery logicdevices. As a result, there may be a differential shift in the SPICEcharacteristics of these two models. Hence a delay provided by purelogic devices may not be sufficient when there are changes in memorycell SPICE characteristics.

Also, any significant change in the extractions of parasiticcapacitances of the bit lines results in a change in the voltagedifferential that gets developed across them. The delay introduced bythe programming delays, however, is not affected by a change in theextractions of parasitic capacitances of the bit lines.

Also, the above mention techniques provide the same delay for a memorywith a smaller number of rows as well as for a larger number of rows.However, in general, a cut with a larger number of rows needs a largerdelay than that one with a smaller number of rows to generate the samevoltage differential, which is sufficient for a correct evaluation bythe sense amplifier. The techniques disclosed by the prior art provide afixed delay sufficient for cuts with all row combinations. This resultsin performance deterioration.

Therefore, there arises a need for delay introducing circuitry, whichuses less hardware and provides delays that are a function of memorycell SPICE characteristics and core parasitic capacitances. Also, thedelay should be dependent on the size of the memory.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a programmable delayintroducing circuitry in self-timed memories, which is implemented usingless hardware.

Another object of the present invention is to provide delay introducingcircuitry that introduces a delay in a sense amplifier enable signalthat is a function of memory cell SPICE characteristics and the coreparasitic capacitances.

The above-mentioned objects of the present invention are achieved byproviding a method of introducing delays in self-timed memories, whereinthe delays are introduced by providing a capacitance on the path of theRESET signal. The capacitances are realized by using idle-lying metallayers in the circuit. The RESET signal or another signal in its pathmay be connected to these idle-lying capacitances via programmableswitches.

The reference bit line may be a good candidate for this programmableconnection to the capacitances. The RESET signal produces a sense enablesignal to enable sense amplifiers. Therefore, delay introduced intriggering of the sense amplifiers may depend on the delay introduced inthe RESET signal. This delay depends on the capacitance introduced inthe path of the signal, which in turn depends on a state of theswitches. The state of the switches may be controlled by delay codesprovided externally to the delay introducing circuitry.

Since idle-lying metal capacitances are utilized, extra hardware is notrequired. Thus, in the configuration as disclosed by the presentinvention, there is minimal area overhead in an area required only forthe switches used and the switch control signals generation in thecircuitry.

Moreover, the delay provided by the proposed circuitry may be a functionof the memory cell SPICE characteristics and core parasiticcapacitances. As a result, the delay codes cover a large spectrum ofdelays of interest.

Another feature of the proposed circuitry is that it provides a delaythat increases with the number of rows of a cut. A cut with largernumber of rows needs a larger delay than that with a smaller number ofrows to generate the same voltage differential, which is sufficient fora correct evaluation by the sense amplifier. Hence, the circuit providedby the present invention performs intelligent adaptation of delays withthe number of rows in the cut.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a block diagram of a typical programmable delay elementaccording to the prior art.

FIG. 2 shows another known configuration of a programmable delay elementaccording to the prior art.

FIG. 3 shows a configuration of a programmable delay introducing circuitaccording to the present invention.

FIG. 4 shows a structure of a typical memory array according to thepresent invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 shows a block diagram of a programmable delay element as used inthe field. The circuit comprises memory cells (101), (102), (103) and(104) which are loaded with bits B1, B2, B3 and B4. An inverter (110)drives internal node X. Capacitors (121), (122), (123) and (124) areconnected to node X via transmission gates (111), (112), (113) and(114). The capacitors (121), (122), (123) and (124) have capacitancesC1, C2, C3 and C4. The transmission gates (111), (112), (113) and (114)are controlled by memory cells (101), (102), (103) and (104)respectively. The Q output terminals of the memory cells (101), (102),(103) and (104) are coupled to the gates of the NMOS transistors of thetransmission gates (111), (112), (113) and (114) respectively. The QBoutput terminals of the memory cells (101), (102), (103) and (104) arecoupled to the gates of the PMOS transistors of transmission gates(111), (112), (113) and (114) respectively.

A transmission gate is on if there is logic 1 stored in thecorresponding memory cell. Therefore, a bit pattern 1100 is stored inmemory cells (101), (102), (103) and (104) respectively, turns ontransmission gates (111) and (112) and turns off transmission gates(113) and (114). The load seen by the inverter (110) on node X is thusdetermined by capacitance values of capacitors (121) and (122).Therefore, the load seen by the inverter (110) can be varied by alteringthe bit pattern in the memory cells (101), (102), (103) and (104).

The load added to node X has the largest value equal to C1+C2+C3+C4 whenthe memory cells are programmed to 1111 and the lowest value is equal tozero when the memory cells are programmed to 0000. Therefore, in thepresent configuration, the load seen by the inverter (110) is changed byprogramming appropriate bit patterns in the memory cells. This in turnalters the propagation delay of a signal flowing from inverter (110) toinverter (120).

FIG. 2 shows a block diagram of another known configuration of aprogrammable delay circuit. The programmable delay circuit (200)receives as inputs the precode signal (202) generated by an addressprecode circuitry (not shown in the diagram) and the clock signal (203).In addition to these, test control signals (204) are also received asinputs to the programmable delay circuit (200).

In response to these signals, the programmable delay circuit (200)generates an output signal. This output signal could be a senseamplifier enable signal or a RESET signal which produces a trigger toenable sense amplifiers. Each of the plurality of predecode signals(202) is coupled as an input to a logic circuit (206). The output fromthe logic circuit (206) is connected to a multipath delay generator forgenerating delayed versions of the output signal.

These multiple delayed versions are generated using a first plurality ofinverters (207 a) to generate a first delayed signal (207), and a secondplurality of inverters (208 a) coupled in series with the firstplurality of inverters to generate a second delayed signal (208). Eachof the delay signal versions (207), (208) are input to a multiplexer(209). The function of the multiplexer (209) is to select one signalfrom various delayed versions (207, 208 etc.).

In addition to the delayed signals (207),(208) the output of logiccircuit (206) may also be coupled directly as an additional input tomultiplexer (209) to be available for selection as an output. Themultiplexer (209) selects the appropriate delay from the various delayoptions presented as inputs to it. The appropriate signal selection bythe multiplexer (209) is controlled by selection logic (210). Thisselection logic receives the values stored in control registers (211)and (212). These control registers are controlled by test controlsignals (204). Therefore, the delay introduced by the programmable delaycircuit is controlled by the test control signals (204).

FIG. 3 shows a detailed block diagram of programmable delay introducingcircuitry as disclosed by the present invention. A delay in RESET signalis introduced by introducing a capacitance on the signal path. The RESETsignal (310) acts as an input to delay introducing circuitry (300),which gives an output signal (320). The output signal (320) is thedelayed version of the input RESET signal.

Delay introducing circuit (300) comprises an array of capacitors C1, C2,C3 . . . CN as shown in FIG. 3. Each of these capacitors has a pair ofswitches associated with it. SA1, SA2, SA3 . . . SAN and SB1, SB2, SB3 .. . SBN are the two sets of switches. Note that although N capacitorsare provided in this embodiment, the actual implementation of the delayelement can be varied in different embodiments without departing fromthe scope of the invention. Apart from these two sets of switches, aswitch S0 is also provided in the circuit as shown in FIG. 3. The stateof the switches in the delay introducing circuitry is controlled bydelay codes (315) applied externally to the circuit.

Whenever any pair of switches is switched on by the delay codes, thecapacitor associated with that pair of switches is introduced in thepath of the input RESET signal. For example, in the circuit shown inFIG. 3, if switch S0 is on whereas SA1 and SB1, SB2, SB3 . . . SBN areall off then the input signal (310) as well as the output signal (320)see no capacitances in their path. As a result, no extra delay isintroduced in the input signal (310) and the output signal (320) isdelayed a minimum from the input signal.

In case when the delay codes (315) are such that switches SA1 and S0 areon whereas SA2, SB1, SB2 . . . SBN are off then capacitance C1 isintroduced in the path of the input signal. This introduces a delay inthe input signal as a result of which the output signal (320) is adelayed version of the input signal (310). The delay introduced in theinput signal is proportional to the capacitance of capacitor C1.Similarly, if the switches SA1- and SA2 are on, then capacitors C1 andC2 are introduced in the path of input signal and a delay proportionalto capacitance C1+C2 is introduced. When switches SA1 and SA2 are on,various combinations of switches S0, SB1 and SB2 introduce differentdelays in the input signal.

In the circuit shown in FIG. 3, many delayed versions of the inputsignal can be generated. When all the switches except S0 are switchedoff, no capacitance is introduced in the input signal path. Thus, inthis state, a minimum delay is introduced in the signal. A maximum delayis introduced when all the switches SA1, SA2 . . . SAN and SBN areswitched on and S0, SB1 . . . SB(N-1) are off. In this state, a maximumcapacitance equal to C1+C2+ . . . +CN is introduced to the input signalpath. Also, the input signal (310) has to pass through all the switchesSA1, SA2 . . . SAN and SBN to generate the output (320). This results inintroduction of a maximum delay in the input signal. Therefore, thedelay can be varied from minimum to the maximum value by altering thestate of the switches in the circuit by the delay codes (315).

The capacitors used in the circuit disclosed by the present inventionare realized in a novel way. This is explained with reference to FIG. 4.In general, self-timed memories have a reference column incorporatedinto it to track the memory discharge behavior. However, for perfectfunctioning of self-timing circuitry, the reference column should seethe same environment (and same capacitance) as seen by the normal memorycell column. For this purpose, a complete or half-column of memory cellsis provided on both sides of the reference column to provide theperiphery similar to that seen by the actual memory cell. One or morecolumns corresponding to the write self-timing circuit may also bepresent in the circuit. These extra columns usually have unused metallayers. In the circuit disclosed by the present invention, these unusedmetal layers are used to realize capacitances C1, C2 . . . CN.

As shown in FIG. 4, a reference column (400) is surrounded by normalmemory cell columns (410) and (420). The metal layers in columns (410)and (420) are utilized to realize capacitances. In another configurationof the present invention, metal layers running over any adjacent blockare used. For example, generally a word line decoder block (430) isplaced just adjacent to the reference column on one side and actualmemory core (440) on the other as shown in FIG. 4. The word line decoderblock (430) has a word line driver placed just next to the referencecolumn. Metal layers over these drivers are used to realizecapacitances. This configuration is useful in cases where extra columnsare not available or the extra columns do not provide a sufficientnumber of metal layers.

Since the method utilizes idle-lying metal layers, there is a minimalarea overhead in an area required only for the switches that are used inthe circuitry. As a result, the disclosed circuit requires less hardwareas compared to the delay introducing elements used in the prior art.

Another advantage of realizing capacitance from unused metal rails of anadjacent memory cell column is that the delay introduced in the RESETsignal is a function of memory cell SPICE characteristics and the memorycore parasitic capacitances. Therefore, the amount of maximum delay,minimum delay etc. that is determined by the delay code applied, changesdynamically with changes in the memory cell SPICE or extraction values.As a result, this configuration covers a larger spectrum of delays ofinterest, especially when the requirements of the delay change are dueto the change in the memory cell SPICE characteristics or newextractions of parasitic capacitances or both.

Moreover, since the circuit of the present invention adapts to the delayprovided, it means that the delay that needs to be provided in CAD(where a differential shift in SPICES or a change in extractions is notconsidered) to ensure an equal margin in a worst-case scenario onsilicon, is less than what is required in the circuitries used by theprior art.

That which is claimed:
 1. A circuit for introducing a programmable delayin triggering a sense amplifier circuit in a memory device comprising aplurality of conducting layers, the circuit comprising: at least onecapacitor defined by a portion of the plurality of conducting layers;and at least one switch configured to control said at least onecapacitor for changing a delay interval for the programmable delay, witha signal introducing the programmable delay passing through said atleast one switch and a state of said at least one switch beingcontrolled by a selection signal.
 2. The circuit according to claim 1,wherein the memory device further comprises memory cell columns and areference column; and wherein the portion of the conducting layersdefining said at least one capacitor is part of the memory cell columns.3. The circuit according to claim 1, wherein the memory device furthercomprises a plurality of word line drivers adjacent a reference column;and wherein the portion of the conducting layers defining said at leastone capacitor is over the plurality of word line drivers.
 4. The circuitaccording to claim 1, wherein the memory device further comprises a wordline driver in a word line decoder adjacent a reference column; andwherein the portion of the conducting layers defining said at least onecapacitor is over the word line driver.
 5. The circuit according toclaim 1, wherein the memory device further comprises at least one senseamplifier; and wherein a signal that introduces the programmable delaycomprises a RESET signal that produces a sense enable signal forenabling the at least one sense amplifier.
 6. The circuit according toclaim 1, wherein said at least one capacitor comprises a pluralitythereof; and wherein said at least one switch comprises a pluralitythereof.
 7. The circuit according to claim 1, wherein the selectionsignal comprises an externally generated signal.
 8. A memory devicecomprising: a memory cell array; a sense amplifier circuit coupled tosaid memory cell array; a plurality of conducting layers; and aprogrammable delay circuit configured to introduce a programmable delayin triggering said sense amplifier circuit, said programmable delaycircuit comprising a plurality of capacitors defined by a portion ofsaid plurality of conducting layers, and at least one switch coupled tosaid plurality of capacitors and configured to change the programmabledelay, with a signal introducing the programmable delay passing throughsaid at least one switch.
 9. The memory device according to claim 8,wherein said memory cell array further comprises memory cell columns anda reference column; and wherein the portion of the conducting layersdefining said at least one capacitor is part of the memory cell columns.10. The memory device according to claim 8, wherein said memory cellarray further comprises a plurality of word line drivers adjacent areference column; and wherein the portion of the conducting layersdefining said at least one capacitor is over the plurality of word linedrivers.
 11. The memory device according to claim 8, wherein said memorycell array further comprises a word line driver in a word line decoderadjacent a reference column; and wherein the portion of the conductinglayers defining said at least one capacitor is over the word linedriver.
 12. The memory device according to claim 8, wherein a signalintroducing the delay comprises a RESET signal that produces a senseenable signal for triggering said sense amplifier circuit.
 13. Thememory device according to claim 8, wherein said at least one capacitorcomprises a plurality thereof; and wherein said at least one switchcomprises a plurality thereof.
 14. The memory device according to claim8, wherein a state of said at least one switch is based on an externallygenerated selection signal.